40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Source Voltage

± 20

V

60

A

38

A

Drain Current – Pulsed

1

240

A

EAS

Single Pulse Avalanche Energy

2

76

mJ

IAS

Single Pulse Avalanche Current

2

39

A

62

W

Power Dissipation – Derate above 25℃

0.496

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

2.01

℃/W

BVDSS

RDSON

ID

40V

6.7m

Ω

60A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 60A, RDS(ON) =6.7m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-252 Pin Configuration

D

S

G

2019. 02. 11

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4964D

1

1. Gate

2. Drain

3. Source

3

2