FTK5903DC datasheet(2/4 Pages) FS

2 / 4 page

2014.12. 10

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FTK5903DC

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STAT IC PARAMETERS

Drain-source breakdown voltage

V (BR) DSS

VGS = 0V, ID =-250µA

-20

Zero gate voltage drain current

IDSS

VDS =-16V,VGS = 0V

-1

µA

Gate-body leakage current

IGSS

VGS =±10V, VDS = 0V

±10

Gate threshold voltage (note 1)

VGS( h)

VDS =VGS, ID =-250µA

-0.4

-1

Drain-source on-resistance (note 1)

RDS(on)

VGS =-4.5V, ID =-4.3A

mΩ

VGS =-2.5V, ID =-3.6A

mΩ

VGS =-1.8V, ID =-1.5A

120

mΩ

Forward tranconductance (note 1)

gFS

VDS =-6V, ID =-4.6A

Diode forward voltage(note 1)

VSD

IS=-4.5A, VGS = 0V

-1.2

DYNAM IC PARAMETERS

(note 2)

Input Capacitance

Ciss

VDS =-6V,VGS =0V,f =1MHz

1500

Output Capacitance

Coss

260

Reverse Transfer Capacitance

Crss

250

Total gate charge

VDS =-6V,VGS =-4.5V,ID =-5.6A

Gate-source charge

Qgs

2.3

Gate-drain charge

Qgd

2.5

SWITCHING PARA METERS

(note 2)

Turn-on delay time

td(on)

VGS=-4.5V,VDD=-6V,

Rg=1Ω,RL=1.3Ω,ID≌-4.5A

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Notes :

1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

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