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LMD0139 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LMD0139
Description  P-Channel Enhancement Mode Fieid Effect Transistor
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LMD0139 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-100
---
---
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-10A
---
42
50
m
VGS=-4.5V , ID=-8A
---
46
55
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.8
-2.5
V
IDSS
Drain-Source Leakage Current
VDS=-100V , VGS=0V , TJ=25℃
---
---
-50
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-10V , ID=-10A
---
32
---
S
Qg
Total Gate Charge
VDS=-80V , VGS=-10V , ID=-14A
---
92
---
nC
Qgs
Gate-Source Charge
---
17.5
---
Qgd
Gate-Drain Charge
---
14
---
Td(on)
Turn-On Delay Time
VDD=-50V , VGS=-10V , RG=3.3,
ID=-14A
---
20.5
---
ns
Tr
Rise Time
---
32.2
---
Td(off)
Turn-Off Delay Time
---
123
---
Tf
Fall Time
---
63.7
---
Ciss
Input Capacitance
VDS=-25V , VGS=0V , f=1MHz
---
6516
---
pF
Coss
Output Capacitance
---
223
---
Crss
Reverse Transfer Capacitance
---
125
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
-30
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=-14A , di/dt=-100A/µs ,
TJ=25℃
---
31.2
---
nS
Qrr
Reverse Recovery Charge
---
31.97
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.88mH,IAS=-28A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
LMD0139
Rev 2.0 :
www.leiditech.com
12.01.2019
2/5



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