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FTK6960P Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK6960P Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  60V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃) 100 A Drain Current – Continuous (TC=100℃) 63.2 A IDM Drain Current – Pulsed1 400 A EAS Single Pulse Avalanche Energy2 181 mJ IAS Single Pulse Avalanched Current2 60.1 A PD Power Dissipation (TC=25℃) 169 W Power Dissipation – Derate above 25℃ 1.35 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 0.74 ℃/W BVDSS RDSON ID 60V 6m Ω 100A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 60V,100A, RDS(ON) =6m Ω @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics D G S Applications Motor Drive Power Tools LED Lighting Quick Charger 1 1. Gate 2. Drain 3. Source 3 2 TO-220 Pin Configuration 2018. 11. 19 1/5 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK6960P |
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