60V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

60

V

Gate-Sou

rce Voltage

± 20

V

38

A

24

A

Drain Current – Pulsed

1

152

A

EAS

Single Pulse Avalanche Energy

2

42

mJ

IAS

Single Pulse Avalanche Current

2

29

A

63

W

Power Dissipation – Derate above 25℃

0.5

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

2

℃/W

BVDSS

RDSON

ID

60V

21

mΩ

38A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 60V,38A,RDS(ON)=21m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

 Motor Drive

 Power Tools

 LED Lighting

Thermal Characteristics

TO-252 Pin Configuration

S

G

D

D

S

G

2018. 07. 16

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK6906D