60V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-60

V

Gate-Sou

rce Voltage

± 25

V

-3.3

A

-2.6

A

Drain Current – Pulsed

1

-13.2

A

EAS

Single Pulse Avalanche Energy

2

31

mJ

IAS

Single Pulse Avalanche Current

2

-25

A

1.47

W

Power Dissipation – Derate above 25℃

0.012

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

-60V

68m

Ω

-3.3A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -60V,-3.3A, RDS(ON) =68

mΩ@VGS = -10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

 Motor Drive

 Power Tools

 LED Lighting

Thermal Characteristics

SOP-8 Pin Configuration

D

G

S

2018. 06. 11

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK6907

D

S

G

D

D

D

S

S

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

85

℃/W

1

5

4

8