60V P-Channel MOSFETs

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to Case

---

6.1

℃/W

Thermal Resistance Junction to Ambient

---

62

℃/W

BVDSS

RDSON

ID

-60V

68m

Ω

-13A

 Fast switching

 Green Device Available

General Description

Features

Applications

 POL Applications

 Load Switch

 LED Application

SEMICONDUCTOR

TECHNICAL DATA

FTK6907D

2018. 02. 08

1/5

Revision No : 0

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

S

D

G

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-60

V

Gate-Sou

rce Voltage

± 25

V

-13

A

-8

A

Drain Current – Pulsed

1

-52

A

EAS

Single Pulse Avalanche Energy

2

31

mJ

IAS

Single Pulse Avalanche Current

2

-25

A

20

W

Power Dissipation – Derate above 25℃

0.16

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

Thermal Characteristics

TO-252 Pin Configuration

1

1. Gate

2. Drain

3. Source

3

2