Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

FTK6907Z Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6907Z
Description  60V P-Channel MOSFETs
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6907Z Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK6907Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK6907Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK6907Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK6907Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK6907Z Datasheet HTML 5Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
60V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=
-1mA
---
-0.05
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=
-60V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-48V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-8A
---
54
68
mΩ
VGS=
-4.5V , ID=-6A
---
72
85
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID=
-250uA
-1.2
-1.6
-2.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
5
---
mV/℃
gfs
Forward Transconductance
VDS=
-10V , ID=-3A
---
8.5
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=
-30V , VGS=-10V , ID=-3A
---
16.4
23
nC
Qgs
Gate-Source Charge3 , 4
---
2.8
4
Qgd
Gate-Drain Charge3 , 4
---
3.6
6
Td(on)
Turn-On Delay Time3 , 4
VDD=
-30V , VGS=-10V , RG=6Ω
ID=
-1A
---
8.3
16
ns
Tr
Rise Time3 , 4
---
29.6
56
Td(off)
Turn-Off Delay Time3 , 4
---
51.7
98
Tf
Fall Time3 , 4
---
15.6
30
Ciss
Input Capacitance
VDS=
-30V , VGS=0V , F=1MHz
---
870
1260
pF
Coss
Output Capacitance
---
70
100
Crss
Reverse Transfer Capacitance
---
42
60
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
16
32
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-12
A
ISM
Pulsed Source Current
---
---
-24
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
FTK6907Z
2018. 12. 10
2/5
Revision No : 0



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com