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FTK6911 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK6911 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID= -250uA -60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID= -1mA --- -0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS= -60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS= -48V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS= -10V , ID=-2A --- 160 190 mΩ VGS= -4.5V , ID=-1.5A --- 200 240 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID= -250uA -1.2 -1.9 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- 5 --- mV/℃ gfs Forward Transconductance VDS= -10V , ID=-2A --- 3.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS= -30V , VGS=-10V , ID=-2A --- 8.2 12 nC Qgs Gate-Source Charge2 , 3 --- 1.8 3.6 Qgd Gate-Drain Charge2 , 3 --- 1.5 3 Td(on) Turn-On Delay Time2 , 3 VDD= -30V , VGS=-10V , RG=6Ω ID= -1A --- 5.2 10 ns Tr Rise Time2 , 3 --- 19 36 Td(off) Turn-Off Delay Time2 , 3 --- 35 67 Tf Fall Time2 , 3 --- 10.6 20 Ciss Input Capacitance VDS= -30V , VGS=0V , F=1MHz --- 425 615 pF Coss Output Capacitance --- 35 50 Crss Reverse Transfer Capacitance --- 20 30 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -2 A ISM Pulsed Source Current --- --- -4 A VSD Diode Forward Voltage VGS=0V , IS= -1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings 2018. 08. 16 2/5 Revision No : 0 FTK6911 |
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