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FTK6970P Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6970P
Description  60V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6970P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.043
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=20A
---
1.4
2.2
mΩ
VGS=6V , ID=15A
---
1.8
2.6
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.5
2.3
3.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.7
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=5A
---
25
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=48V , VGS=10V , ID=10A
---
293
450
nC
Qgs
Gate-Source Charge3 , 4
---
61.8
93
Qgd
Gate-Drain Charge3 , 4
---
123
185
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=3.3Ω
ID=1A
---
45.4
90
ns
Tr
Rise Time3 , 4
---
122.2
145
Td(off)
Turn-Off Delay Time3 , 4
---
175.4
350
Tf
Fall Time3 , 4
---
36.6
72
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
16920 33000
pF
Coss
Output Capacitance
---
1361
2700
Crss
Reverse Transfer Capacitance
---
424
840
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.6
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
170
A
ISM
Pulsed Source Current3
---
---
340
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=146A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
60V N-Channel MOSFETs
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2019. 06. 24
2/5
Revision No : 0
FTK6970P



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