Transistors

1

2SC2480

Silicon NPN epitaxial planer type

For high-frequency amplification / oscillation / mixing

I Features

• High transition frequency f

T

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

I Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Collector to base voltage

30

V

Collector to emitter voltage

20

V

Emitter to base voltage

3V

Collector current

50

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector to base voltage

= 100 µA, I

E

= 030

V

Emitter to base voltage

V

Forward current transfer ratio

= 10 V, I

E

= −2 mA

25

250

Base to emitter voltage

= 10 V, I

E

= −2 mA

720

mV

800

1 300

1 600

MHz

Common emitter reverse transfer

= 10 V, I

E

= −1 mA, f = 10.7 MHz

1

1.5

pF

capacitance

= 6 V, I

C

= 0, f = 1 MHz

0.8

pF

Power gain

PG

20

dB

I Electrical Characteristics T

Marking Symbol: R

Note) *: Rank classification

Rank

T

S

No-rank

800 to 1 400 1 000 to 1 600 800 to 1 600

Marking symbol

RT

RS

R

Unit: mm

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10

°

1: Base

JEDEC: TO-236

2: Emitter

EIAJ: SC-59

3: Collector

Mini Type Package

Product of no-rank is not classified and have no indication for rank.