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FTK8205 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK8205
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK8205 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK8205 Datasheet HTML 1Page - First Silicon Co., Ltd FTK8205 Datasheet HTML 2Page - First Silicon Co., Ltd FTK8205 Datasheet HTML 3Page - First Silicon Co., Ltd FTK8205 Datasheet HTML 4Page - First Silicon Co., Ltd  
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2019. 06. 14
2/4
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted)
Notes:
1. Surface Mounted on FR4 Board, t≤ 10 sec.
2. Pulse Test: Pulse Width≤ 300μs, Duty Cycle ≤2%.
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
20
V
Drain-Source Leakage
Current(Tj=25 )
℃
IDSS
VDS=20V, VGS=0V
1
μA
Drain-Source Leakage
Current(Tj=70 )
℃
IDSS
VDS=16V, VGS=0V
25
μA
Gate-Source Leakage Current
IGSS
VGS=±10V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=250μA
0.5
1.2
V
Static Drain-Source On-Resistance RDS(on)
VGS=4.5V, ID==6.0A
24
mΩ
VGS=2.5V, ID=5.2A
30
mΩ
Forward Transconductance
gFS
VDS=10V, ID=6.0A
20
S
Forward On Voltage
VSD
VGS=0V, IS=1.7A
1.2
V
Input Capacitance
Ciss
VDS=20V, VGS=0V
f=1.0MHz
1035
pF
Output Capacitance
Coss
F
p
0
2
3
Reverse Transfer Capacitance
Crss
F
p
0
5
1
Turn-on Delay Time
td(on)
VDS=10V, ID=1A
VGS=5V, RG=6Ω
RD=10Ω
30
ns
t
e
m
i
T
e
s
i
R
r
s
n
0
7
Turn-off Delay Time
td(off)
s
n
0
4
Fall Time
tf
s
n
5
6
FTK8205



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