80V N-Channel MOSFETs

BVDSS

RDSON

ID

80V

3.9mΩ

120A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

General Description

Thermal Characteristics

TO-220 Pin Configuration

D

S

D

G

S

G

2018. 06. 25

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK8974P

 80V,120A, RDS(ON) =3.9m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

Features

Applications

 Networking

 Load Switch

 LED applications

 Quick Charger

Symbol

Parameter

Rating

Units

Drain-Source Voltage

80

V

Gate-Sou

rce Voltage

+20/-12

V

℃)

120

A

℃)

76

A

480

A

EAS

245

mJ

IAS

70

A

℃)

184

W

Power Dissipation – Derate above 25

℃

1.47

W/

℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

0.68

℃/W