1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

V

DGR

T

J

= 25

°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

26N50

26

A

24N50

24

A

I

DM

T

C

= 25

°C, Pulse width limited by T

JM

26N50

104

A

24N50

96

A

I

AR

T

C

= 25

°C

26N50

26

A

24N50

24

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute leads-to-tab

2500

V~

Weight

6

g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

500

V

V

GS(th)

V

2

4

V

I

GSS

V

±100

nA

I

DSS

V

T

J

= 25

°C

200

mA

V

T

1

mA

R

DS(on)

V

26N50

0.20

W

Notes 1 & 2

24N50

0.23

W

98526A (2/99)

G

D

Advanced Technical Information

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<50pF)

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density

G = Gate

D = Drain

S = Source

* Patent pending

Isolated back surface*

V

DSS

I

D25

R

DS(on)

IXFR 26N50

500 V

24 A

0.20

W

IXFR 24N50

500 V

22 A

0.23

W

t

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

High dV/dt, Low t

IXYS reserves the right to change limits, test conditions, and dimensions.