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LM2301M Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM2301M Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 4 page ![]() )($785( z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive $33/,&$7,21 z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Electronics 0D[LPXPUDWLQJV7D XQOHVVRWKHUZLVHQRWHG 3DUDPHWHU 6\PERO 9DOXH 8QLW Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±8 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current (tp=10 s) IDM -1.2 A Power Dissipation (note 1) PD 150 mW Thermal Resistance from Junction to Ambient (note 1) R JA 833 /W Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 Lead Temperature for Soldering Purposes(1/8” from case for 10 s) TL 260 0$5.,1* Equivalent Circuit V(BR)DSS RDS(on)MAX ID 9 P #9 $ 627 1. GATE 2. SOURCE 3. DRAIN G S D 95P # 189 ( TYP) 5P #9 P3 LM2301M Enhancement Mode Power MOSFET P-Channel Rev 2.0 : www.leiditech.com 12.01.2019 1/4 |
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