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IRF540 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # IRF540
Description  N -Channel Power MOSFET (100V/27A)
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

IRF540 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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2018. 12. 06
2/4
IRF540
Revision No : 1
Electrical characteristics (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
(BR)DSS
VGS = 0V, ID =250µA
100
V
Zero gate voltage drain current
DSS
V DS =100V, VGS =0V
25
µA
Gate-body leakage current
GSS
VDS =0V, VGS =±20V
±
100
nA
On characteristics (note2)
V
e
g
a
t
l
o
v
d
l
o
h
s
e
r
h
t
-
e
t
a
G
GS(th)
VDS =VGS, ID =250µA
2
4
V
Static drain-source on-resistance
DS(on)
VGS =10V,ID =16A
mΩ
Forward transconductance
fs
VDS =50V, ID =7.5A
3.8
S
Dynamic characteristics (note 3)
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
n
I
iss
800
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
t
u
O
oss
240
Reverse transfer capacitance
rss
VDS =25V,VGS =0V,f =1MHz
76
pF
Switching characteristics (note 3)
t
e
m
i
t
y
a
l
e
d
n
o
-
n
r
u
T
d(on)
9.4
t
e
m
i
t
e
s
i
r
n
o
-
n
r
u
T
r
28
t
e
m
i
t
y
a
l
e
d
f
f
o
-
n
r
u
T
d(off)
39
t
e
m
i
t
ll
a
f
f
f
o
-
n
r
u
T
f
VDD=100V, VGS=10V,
RG=12Ω, ID =5.9A
20
ns
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
SD
VGS = 0V, IS =14A
2
V
Continuous drain-source diode forward
current(note4)
IS
9.3
A
Pulsed drain-source diode forward current
SM
37
A
Notes :
1.
L=4.6mH, IL=9.9A, VDD=50V, RG=25Ω,Starting TJ=25℃
.
2.
Pulse Test : Pulse width ≤300µs, duty cycle ≤2%.
3.
Guaranteed by design,not subject to production
4.
Surface mounted on FR4 board, t≤10s
V
I
I
R
g
C
V
I
34
44



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