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KBJ1001 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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KBJ1001 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  SEMICONDUCTOR TECHNICAL DATA KBJ10005 ~ KBJ1010 2013 04 15 1/2 Revision No : 0 Bridge Rectifier ■ Features ■ Outline Dimensions and Mark ● Io 10A ● VRRM 50V~1000V ● Glass passivated chip ● High surge forward current capability ■ Applications ● General purpose 1 phase Bridge rectifier applications ■ Limiting Values(Absolute Maximum Rating) KBJ10 Item Symbol Unit Conditions 005 01 02 04 06 08 10 Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 With heatsink Tc =80℃ 10 Average Rectified Output Current IO A 60Hz sine wave, R-load Without heatsink Ta =25℃ 3.6 Surge(Non- repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 150 Current Squared Time I 2t A 2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 93 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 Dielectric Strength Vdis KV Terminals to case，AC 1 minute 2 Mounting Torque Tor kg· cm Recommend torque：5kg·cm 8 ■ Electrical Characteristics（T a=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage VFM V IFM=5A, Pulse measurement, Rating of per diode 1.1 Peak Reverse Current IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode 10 RθJ-A Between junction and ambient, Without heatsink 25 Thermal Resistance RθJ-C ℃/W Between junction and case, With heatsink 2.3 Dimensions in inches and (millimeters) + ~ ~ - 4KBJ .708(18.0) .669(17.0) .303(7.7) .287(7.3) .043(1.1) .035(0.9) HOLE FOR NO. 6 SCREW .150(3.8) .134(3.4) .189(4.8) .173(4.4) . 3 3. ) . 22 3.1) DIA .031(0.8) .023(0.6) .303(7.7) .287(7.3) .303(7.7) .287(7.3) .083(2.1) .069(1.7) .057(1.45) .041(1.05) .146(3.7) .130(3.3) .398(10.1) .374(9.5) .134(3.4) .126(3.2) .602(15.3) .578(14.7) .995(25.3) .983(24.7) .165(4.2) .150(3.8) |
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