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KBL401 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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KBL401 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() SEMICONDUCTOR TECHNICAL DATA KBL4005 ~ KBL410 2013. 04. 15 1/2 Revision No : 0 Bridge Rectifier ■ Features ■ Outline Dimensions and Mark ● Io 4A ● VRRM 50V~1000V ● Glass passivated chip ● High surge forward current capability ■ Applications ● General purpose 1 phase Bridge rectifier applications ■ Limiting Values(Absolute Maximum Rating) .6 30 (1 6 .0 ) M IN A C .6 40 (1 6 .3 ) .6 00 (1 5 .2 ) .0 5 2 (1 .3 ) .0 4 8 (1 .2 ) D IA .2 2 0 (5 .6 ) .1 8 1 (4 .6 ) .61 8 (15 .7 ) .54 0 (13 .7 ) .2 5 6 6 .5 ) .2 1 7 5 .5 ) .0 7 1 (1 .8 ) .7 6 8 (19 .5 ) .7 2 8 (18 .5 ) D im e n s io n s in in c h e s and (m illim e te rs ) K B L Item Symbol Unit Conditions KBL4 005 01 02 04 06 08 10 Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Average Rectified Output Current IO A 60HZ sine wave, R- load, Ta=40℃ 4 Surge(Non-repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Ta=25℃ 150 Current Squared Time I 2t A 2s 1ms ≤t < 8.3ms Tj=25 ,Rat ℃ ing of per diode 93 Storage Temperature TSTG ℃ -55 ~+150 Junction Temperature TJ ℃ -55 ~+150 ■ Electrical Characteristics(T a=25℃ Unless otherwise specified) Item Symbol Unit Test Condition Max Peak Forward Voltage VFM V IFM=4A, Pulse measurement, Rating of per diode 1.05 Peak Reverse Current IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode 10 Thermal Resistance R θJ-A /W ℃ Between junction and ambient 13 (1) R θJ-L Between junction and lead 2.4 (2) (Notes): (1)Thermal resistance from junction to ambient with units mounted on 3.0*3.0*0.11” thick(7 5*7.5*0 3cm) aluminum plate (2)Thermal resistance from junction to lead with units mounted on P.C.B.at 0.375’’(9.5mm)lead length and 0.5*0.5’’(12*12mm) copper pads |
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