1

Transistor

2SC3829

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

q

Low noise figure NF.

q

High gain.

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

15

10

2

80

200

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

Transition frequency

Collector output capacitance

Foward transfer gain

Maximum unilateral power gain

Noise figure

Symbol

2

GUM

NF

Conditions

min

15

10

50

5

10

typ

150

6

0.7

13.5

15

max

1

1

300

1.2

2

Unit

µA

µA

V

V

GHz

pF

dB

dB

dB

Marking symbol :

3M