SEMICONDUCTOR

TECHNICAL DATA

TYN610F

2016. 02. 06

1/2

Revision No : 0

Silicon Planar PNPN Thyristor (10A SCR)

MAIN FEATURES

Symbol

value

unit

10

A

600

V

100

A

GENERAL DESCRIPTION

intended for use in applications requiring

high bidirectional transient andblocking

voltage capability and high thermal cycling performance.

industrial and domestic lighting, heating and static switching.

e

u

l

a

v

r

e

t

e

m

a

r

a

p

l

o

b

m

y

s

unit

RMS on-state current (full sine wave)

℃

t=10ms

100

Non repetitive surge peak on-state current (full sine wave, Tj =25

℃)

t=8.3ms

110

A

Peak gate current

4

A

Average gate power dissipation

℃

0.5

W

Storage junction temperature range

Operating junction temperature range

-40 to +150

-40 to +125

℃

Parameter

Symbol

Test

conditions

Min

Max

Unit

Rated repetitive peak off-state/reverse voltage

μA

600

V

Rated repetitive peak off-state current

V

0

2

10

μA

On-state voltage

1.75

V

15

mA

Gate trigger current

Ω

1.45

Gate trigger voltage

Ω

Holding current

20

mA

TO-220F

1. KATHODE

2. ANODE

3. GATE

=0.1A

=0.1A

1.4

TO-220F

A

10

V

A

A

B

C

C

D

D

E

E

F

G

H

H

1 52 MAX

1 52 MAX

J

K

L

M

L

N

N

N

O

Q

R

R

1

2

3

M

DIM

MILLIMETERS

10 16

0 20

+

_

15 00

0 20

+

_

3 00

0 20

+

_

0 625±0 125

3 50 typ

0 45

0 1

+

_

3 80

0 2

+

_

13 20

0 20

+

_

2 54

0 2

+

_

4 50

0 2

+

_

6 36

0 3

+

_

2 70

0 20

+

_

2 7 typ

16 80

0 4

+

_