2SC2062S

Transistors

Rev.A

1/2

High-gain Amplifier Transistor (32V, 0.3A)

2SC2062S

Features

2) High input impedance.

Absolute maximum ratings (Ta=25

°C)

E

C

B

C

B

E

: Emitter

: Collector

: Base

External dimensions (Unit : mm)

Taping specifications

SPT

0.45

2.5

(1) (2) (3)

5.0

0.45

0.5

4.0

2.0

(1)Emitter

(2)Collector

(3)Base

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Tj

Tstg

Limits

40

32

12

0.3

0.3

150

−55 to +150

Unit

V

V

V

A

W

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

40

32

12

−

−

−

−

−

−

−

−

−

200

2.5

−

−

−

0.1

0.1

−

∗

−

V

V

V

µA

µA

MHz

pF

=100µA

=10mA

=100µA

=30V

=12V

−−

1.4

V

=200mA/0.2mA

10000

−−−

=3V/0.1A

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Output capacitance

Collector-emitter saturation voltage

Type

2SC2062S

SPT

C

TP

5000

Package

Code

Basic ordering unit (pieces)