EMI8043 datasheet(3/10 Pages) ONSEMI

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EMI804x Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VRWM Reverse Working Voltage

(Note 3)

3.3

VBR

Breakdown Voltage

IT = 1 mA; (Note 4)

4.0

9.0

ILEAK Channel Leakage Current

TA = 25°C, VIN = 3.3 V, GND = 0 V

1.0

RCH

Channel Resistance

(Pins 1−6, 2−5) − EMI8041

(Pins 1−10, 2−9, 4−7 and 5−6) − EMI8042

(Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8043

6.0

DMLOSS Differential Mode Insertion Loss

@ 2.5 GHz

2.5

f3dB

Differential Mode Cut-off Frequency

50 W Source and Load

Termination

5.0

GHz

Fatten Common Mode Stop Band Attenuation

@ 700 MHz

VESD In-system ESD Withstand Voltage

a) Contact discharge per IEC 61000-4-2 standard, Level 4

(External Pins)

b) Contact discharge per IEC 61000-4-2 standard, Level 1

(Internal Pins)

(Notes 1 and 2)

±15

±2

VCL

TLP Clamping Voltage

Forward IPP = 8 A

Forward IPP = 16 A

Forward IPP = −8 A

Forward IPP = −16 A

7.26

11.8

−3.5

−6.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded.

2. These measurements performed with no external capacitor.

3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC

or continuous peak operating voltage level.

4. VBR is measured at pulse test current IT.

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