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FTK3N80F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK3N80F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 6 page ![]() 1.Gate 3.Source 2.Drain 3 Amps, 800 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 3N80 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) = 5Ω@V GS = 10V * Low gate and reverse transfer Capacitance ( C: 16 pF typical ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2008. 1. 28 1/6 SEMICONDUCTOR TECHNICAL DATA FTK3N80P/F/D/I Revision No : 0 Power MOSFET TO - 220 1 TO - 252 TO - 251 1 1 1 TO - 220F I : D : P : F : ORDERING INFORMATION Ordering Number Pin Assignment Package 1 2 3 Packing FTK3N80P TO-220 G D S Tube FTK3N80F TO-220F G D S Tube FTK3N80I TO-251 G D S Tube FTK3N80D TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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Similar Description - FTK3N80F |
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