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ATP208 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # ATP208
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

ATP208 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1
1.6
2.5
V
RDS(ON)
Dra i n-Source On Resistance
3
VGS=10V,ID=20A
---
4.2
5.5
mΩ
VGS=4.5V,ID=10A
---
5.3
7
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=10A
---
16
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=25V, VGS=0V, f=1MHz
---
2410
3600
pF
Coss
Output Ca pacitance
---
233
400
Crss
Reverse Tra nsfer Ca pacitance
---
152
230
Switching Characteristics
td(on)
Turn-On Delay Ti me
2,3
VDD=20V, ID=1A,
VGS=10V,RGEN=3.3Ω
---
14.2
28
ns
tr
Ri s e Time
2,3
---
18.3
36
ns
td(off)
Turn-Off Delay Ti me
2,3
---
38.8
76
ns
tf
Fa ll Ti me
2,3
---
13.9
28
ns
Qg
Tota l Gate Charge
3
VGS=4.5V, VDS=32V,
ID=10A
---
25
50
nC
Qgs
Ga te-Source Cha rge
---
6.5
13
nC
Qgd
Ga te-Drain “Miller” Charge
---
12.1
24
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=1A
---
---
1
V
ATP208



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