2SC5873S

Transistors

Rev.A

1/3

2SC5873S

Features

1) High speed switching.

2) Low saturation voltage, typically

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2085S

Applications

Small signal low frequency amplifier

High speed switching

External dimensions (Unit : mm)

Taping specifications

SPT

0.45

2.5

(1) (2) (3)

5.0

0.45

0.5

4.0

2.0

(1) Emitter

(2) Collector

(3) Base

Structure

NPN Silicon epitaxial planar transistor

Packaging specifications

Taping

2SC5873S

Type

TP

5000

Package

Basic ordering unit (pieces)

Code

Absolute maximum ratings (Ta=25

°C)

Parameter

V

V

V

A

A

mW

°C

°C

Symbol

Tj

Tstg

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

DC

Pulsed

30

30

6

0.5

1.0

300

150

−55 to 150

∗

∗Pw=10ms