2SC3939 datasheet(1/3 Pages) PANASONIC

Part #	2SC3939

Description	Silicon NPN epitaxial planer type(For low-frequency driver amplification)

PDF	3 Pages

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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1

Transistor

2SC3939

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Complementary to 2SA1533

s Features

q

High collector to emitter voltage VCEO.

q

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

q

Allowing supply with the radial taping.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

TO–92NL Package

5.0

±0.2

1.27

123

1.27

4.0

±0.2

0.45

+0.15

–0.1

0.45

+0.15

–0.1

0.7

±0.1

2.54

±0.15

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

80

5

1

0.5

1

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 100µA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 150mA

*2

VCE = 5V, IC = 500mA

*2

IC = 300mA, IB = 30mA

*2

IC = 300mA, IB = 30mA

*2

VCB = 10V, IE = –50mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

80

5

130

50

typ

100

0.2

0.85

120

11

max

0.1

330

0.4

1.2

20

Unit

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

R

S

hFE1

130 ~ 220

185 ~ 330

*2 Pulse measurement

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