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LCE2003 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE2003 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 10 page  Description The LCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE2003 LCE2003 SOT-23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V TA=25℃ 3 -3 Continuous Drain Current TA=70℃ ID 2.4 -2.4 A Pulsed Drain Current (Note 1) IDM 13 -13 A Maximum Power Dissipation TA=25℃ PD 0.8 0.8 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch 156 /W ℃ Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 156 /W ℃ N-channel P-channel N and P-Channel Enhancement Mode Power MOSFET LCE2003 Rev : www.leiditech.com 01.06.2014 1/10 |
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