3A SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 20 to 200 Volts, Forward Current 3.0 Amperes

Features

● Metal silicon junction, majority carrier conduction

● Guardring for overvoltage protection

● Low power loss, high efficiency

● High current capability, low forward voltage drop

● High surge capability

● High temperature soldering guaranteed:

250

℃/10 seconds at terminals

● Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

● For use in low voltage, high frequency inverters,

free wheeling, and polarity protection application

Mechanical Data

● Case: SMA-FL molded plastic body

● Terminals: Plated axial leads,

solderable per MIL-STD-750, method 2026

● Polarity: Color band denotes cathode end

● Mounting Position: Any

● Weight: 0.0027 grams (approximate)

Maximum Ratings and Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

PARAMETER

SYMBOL

SK

32F

SK

33F

SK

34F

SK

35F

SK

36F

SK

38F

SK

310F

SK

315F

SK

320F

UNITS

Maximum repetitive peak reverse voltage

30

40

50

60

80

100

150

200

V

Maximum RMS voltage

21

28

35

42

56

70

105

140

V

Maximum DC blocking voltage

30

40

50

60

80

100

150

200

V

Average Rectified Output Current

0.375″ (9.5mm) lead length

3.0

A

Peak forward surge current, 8.3 mS single half sine-wave

superimposed on rated load

70.0

A

Maximum instantaneous forward voltage at Io

F

V

Maximum DC reverse current

@ TA = 25

℃

at rated DC blocking voltage

@ TA = 100

℃

I

R

0.5

5.0

0.3

3.0

mA

C

J

300

70.0

T

J

℃

Notes: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. P.C.B. mounted with 0.2×0.2”(5.0×5.0 mm) copper pad areas

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

V

20

14

20

0.55

0.70

0.85

0.95

-55 to +150

-55 to +150

pF

℃

SEMICONDUCTOR

TECHNICAL DATA

SK32F~SK320F

2018. 05. 23

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Revision No : 0