DAP222

Diodes

Rev.A

1/2

Switching diode

DAP222

Application

External dimensions (Unit : mm)

Land size figure (Unit : mm)

Ultra high speed switching

Features

1) Ultra small mold type. (EMD3)

2) High reliability.

EMD3

1.0

0.5

0.5

0.7

0.6

0.6

Structure

Construction

Silicon epitaxial planar

ROHM : EMD3

JEITA : SC-75A

JEDEC : SOT-416

Taping specifications (Unit : mm)

Absolute maximum ratings (Ta=25

°C)

Electrical characteristics (Ta=25

°C)

Symbol

Unit

V

V

mA

Io

mA

A

Pd

mW

Tj

℃

Tstg

℃

Parameter

R

F

everse voltage (DC)

erage rectified forward current (Single)

everse voltage (repetitive peak)

orward current (Single)

r dissipation

-55 to +150

Limits

80

100

80

300

150

urge current （t=1us）

4

nction temperature

torage temperature

150

Av

R

Powe

S

Ju

S

Symbol

Min.

Typ.

Max.

Unit

Conditions

--

1.2

V

--

0.1

µA

Ct

-

-

3.5

pF

trr

-

-

4

ns

R

Ca

everse recovery time

pacitance between terminals

everse current

Parameter

rward voltage

R

Fo

d

)

ot (year week factory

(3)

1.6±0.2

1.0±0.1

0.5

0.5

(2)

(1)

0.15±0.05

0.7±0.1

0.55±0.1

0～0.1

0.2±0.1

　　-0.05

0.3±0.1

　　　 0.05

4.0±0.1

2.0±0.05

φ1.55±0.1

　　　　　 0

φ0.5±0.1

0.3±0.1

1.8±0.1

0.9±0.2