LCE3415 datasheet(1/5 Pages) LEIDITECH

Part #	LCE3415

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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Product Summary

● VDS

-20V

● ID

-5.6A

● RDS(ON)( at VGS=-4.5V)

＜36 mohm

● RDS(ON)( at VGS=-2.5V)

＜49 mohm

● RDS(ON)( at VGS=-1.8V)

＜69 mohm

● ESD Protected Up to 2.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

● High Density Cell Design for Low RDS(ON)

● High Speed switching

Applications

● Battery protection

● Load switch

● Power management

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

VDS

-20

V

Gate-source Voltage

VGS

±12

V

Drain Current

TA=25℃ Steady State

ID

-5.6

A

TA=70℃ Steady State

-4.5

Pulsed Drain Current A

IDM

-23

A

Total Power Dissipation @ TA=25℃ Steady State

PD

1.3

W

Thermal Resistance Junction-to-Ambient @ Steady State B

RθJA

96

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

LCE3415

F2

3415.

3000

30000

120000

7

” reel

Enhancement Mode Field Effect Transistor

P-Channel

LCE3415

Rev :

www.leiditech.com

01.06.2018

1/5

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LCE3415 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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