SEMICONDUCTOR

TECHNICAL DATA

U1A ~ U1M

2017 01 02

1/2

Revision No : 1

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current -1.0 Ampere

Case: JEDEC SOD-123FL molded plastic body

over passivated chip

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.0007 ounce, 0.02 grams

Glass passivated device

Ideal for surface mouted applications

FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

U1B

SYMBOLS

UNITS

Metallurgically bonded construction

High temperature soldering guaranteed:

250 C/10 seconds,0.375

5 lbs. (2.3kg) tension

Low reverse leakage

100

70

100

400

280

400

600

420

600

VOLTS

VOLTS

VOLTS

Amp

Amps

Volts

1.0

25.0

1.4

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at1.0A

Maximum DC reverse current

at rated DC blocking voltage

5.0

100.0

A

µ

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

U1D

U1G

U1J

U1M

UB

UD

UG

UJ

UM

UK

U1K

Maximum reverse recovery time (NOTE 1)

Note:

Operating junction and storage temperature range

180

-55 to +150

C

Typical thermal resistance

K/W

1.Measured with IF=0.5A, IR=1A, Irr=0.25A.

50

ns

50

35

50

UA

U1A

trr

200

140

200

800

560

800

1.0

1.7

1000

700

1000

75

SOD-123F

2.8

0.1

Cathode Band

Top View

3.5

0.2

0.6

0.25

Dimensions in millimeters