LM2301C datasheet(1/5 Pages) LEIDITECH

Part #	LM2301C

Description	P-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 5 page

Product Summary

● VDS

-20V

● ID

-3.4A

● RDS(ON)( at VGS=-4.5V)

＜64 mohm

● RDS(ON)( at VGS=-2.5V)

＜80 mohm

● RDS(ON)( at VGS=-1.8V)

＜95 mohm

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

Applications

● PWM applications

● Power management

● Load switch

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

VDS

-20

V

Gate-source Voltage

VGS

±10

V

Drain Current

TA=25℃

ID

-3.4

A

TA=70℃

-2.7

Pulsed Drain Current A

IDM

-14

A

Total Power Dissipation @ TA=25℃

PD

1

W

Thermal Resistance Junction-to-Ambient B

RθJA

125

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

LM2301C

F2

S1.

3000

30000

120000

7“ reel

Enhancement Mode Power MOSFET

LM2301C

P-Channel

Rev :

www.leiditech.com

01.06.2018

1/5

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LM2301C Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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