LM2301D datasheet(1/5 Pages) LEIDITECH

Part #	LM2301D

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 5 page

Product Summary

● VDS

-15V

● ID

-3.8A

● RDS(ON)( at VGS=-4.5V)

＜52 mohm

● RDS(ON)( at VGS=-2.5V)

＜78 mohm

● RDS(ON)( at VGS=-1.8V)

＜87 mohm

General Description

● Trench Power LV MOSFET technology

● Low RDS(ON)

● Low Gate Charge

Applications

● Video monitor

● Power management

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

VDS

-15

V

Gate-source Voltage

VGS

±10

V

Drain Current

TA=25℃ @ Steady State

ID

-3.8

A

TA=70℃ @ Steady State

-3

Pulsed Drain Current A

IDM

-15

A

Total Power Dissipation @ TA=25℃

PD

1

W

Thermal Resistance Junction-to-Ambient @ Steady State B

RθJA

125

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

LM2301D

F2

2301D.

3000

30000

120000

7“ reel

Enhancement Mode Field Effect Transistor

P-Channel

LM2301D

Rev :

www.leiditech.com

01.06.2018

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LM2301D Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM2301D Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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