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LM2301F Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM2301F Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page  General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications . Features VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) -20V - 2.0A 120mΩ(Max) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous TC=25°C I D - 2.0 A TC=100°C I D - 1.25 A Maximum Power Dissipation P D 1. 4 W Drain Current – Pulsed IDM - 8.0 A Junction and Storage Temperature Range T J,TSTG -55 To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance junction-case R θJc 1.1 ℃ /W Thermal Resistance unction-to-Ambient R θJA 60 ℃ /W D G S D G S SOT23 Enhancement Mode Power MOSFET LM2301F P-Channel Rev : www.leiditech.com 01.06.2018 1/5 |
Similar Part No. - LM2301F |
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Similar Description - LM2301F |
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