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LM2302A Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM2302A Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 5 page ![]() ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V,TC=25℃ 1 μA Gate-Body Leakage Current IGSS VGS= ±10V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 0.55 0.85 1.25 V Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=4.3A 21 27 mΩ VGS= 2.5V, ID=3.0A 29 37 Diode Forward Voltage VSD IS=4.3A,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 4.3 A Dynamic Parameters Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHZ 595 pF Output Capacitance Coss 106 Reverse Transfer Capacitance Crss 59 Switching Parameters Total Gate Charge Qg VGS=4.5V,VDS=10V,ID=4.3A 6.6 nC Gate Source Charge Qgs 0.9 Gate Drain Charge Qgd 1.4 Turn-on Delay Time tD(on) VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω 13 ns Turn-on Rise Time tr 54 Turn-off Delay Time tD(off) 18 Turn-off Fall Time tf 11 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. LM2302A Rev : www.leiditech.com 01.06.2018 2/5 |
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