LM3139 datasheet(1/6 Pages) LEIDITECH

Part #	LM3139

Description	P-Channel 1.8-V (G-S) MOSFET

PDF	6 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 6 page

SOT-23

ORDERING INFORMATION

Device

Shipping

3000/Tape&Reel

LM3139

Marking

MARKING DIAGRAM

A1 = Specific Device Code

M = Month Code

A1

1

3

2

(Top View)

Drain

Gate

3

1

2

Source

A1

FEATURES

D TrenchFETr Power MOSFET: 1.8-V Rated

D Gate-Source ESD Protected: 2000 V

D High-Side Switching

D Low On-Resistance: 1.2 W

D Low Threshold: 0.8 V (typ)

D Fast Switching Speed: 14 ns

BENEFITS

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Battery Voltage Operation

APPLICATIONS

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

P-Channel 1.8-V (G-S) MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

"6

V

Continuous Drain Current (TJ = 150_C)b

TA = 25_C

ID

-400

-350

Continuous Drain Current (TJ = 150_C)b

TA = 85_C

ID

-300

-275

mA

Pulsed Drain Currenta

IDM

-1000

mA

Continuous Source Current (diode conduction)b

IS

-275

-250

225

Maximum Power Dissipation

D

mW

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

Notes

d.

Pulse width limited by maximum junction temperature.

e.

Surface Mounted on FR4 Board.

P

D S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

LM3139

Rev :

www.leiditech.com

01.06.2018

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LM3139 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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