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LM3400 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM3400
Description  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM3400 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Product Summary
● VDS
30V
● ID
5.6A
● RDS(ON)( at VGS=10V)
＜27 mohm
● RDS(ON)( at VGS=4.5V)
＜33 mohm
● RDS(ON)( at VGS=2.5V)
＜51 mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
30
V
Gate-source Voltage
VGS
±12
V
Drain Current
TA=25℃ @ Steady State
ID
5.6
A
TA=70℃ @ Steady State
4.5
Pulsed Drain Current A
IDM
23
A
Total Power Dissipation @ TA=25℃
PD
1.2
W
Thermal Resistance Junction-to-Ambient @ Steady State B
RθJA
104
℃/ W
Junction and Storage Temperature Range
TJ ,TSTG
-55～+150
℃
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
LM3400
F2
3400.
3000
30000
120000
7“ reel
Enhancement Mode Power MOSFET
N-Channel
LM3400
Rev :
www.leiditech.com
01.06.2018
1/5


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