S8550 datasheet(1/3 Pages) LEIDITECH

Part #	S8550

Description	High current capacity in compact package

PDF	3 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 3 page

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

-25

V

Collector-Base Voltage

VCBO

-40

V

Emitter-Base Voltage

VEBO

Collector Current

C

-1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

PD

TA=25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance,Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate,(2) TA=25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance,Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

T j, T St g

-55 to +150

°C

FEATURE

High current capacity in compact package.

Epitaxial planar type.

PN

P complement: L8550H

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

1HD

Shipping

3000/Tape&Reel

We declare that the material of product compliance with RoHS requirements.

I

-5

V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Rev : 01.06.2014

1/3

www.leiditech.com

Dimensions SOT-23

Pin Configuration

S8550

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S8550 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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