IMT4

Transistors

Rev.A

1/2

General purpose (dual transistors)

IMT4

Features

1) Two 2SA1514K chips in an AMT package.

2) High breakdown voltage.

Package, marking, and Packaging specifications

IMT4

SMT6

T4

T108

3000

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

External dimensions (Unit : mm)

IMT4

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

Each lead has same dimensions

0.3Min.

2.8

1.6

Equivalent circuit

IMT4

(4)

(5)

(6)

(3)

(2)

(1)

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Pc

Tj

Tstg

Limits

−120

−120

−5

−50

300 (TOTAL)

150

−55 to +150

Unit

V

V

V

mA

mW

∗

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗200mW per element must not be exceeded.

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

−120

−120

−5

−

−

−

−

−

−

−

−

−

−

−

−

−0.5

−0.5

−0.5

V

V

V

µA

µA

V

=

−50µA

=

−1mA

=

−50µA

=

−100V

=

−4V

=

−10mA/−1mA

180

−

820

−

=

Transition frequency

−

140

−

MHz

∗

=

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage