2SD1963

Transistors

Rev.A

1/2

Power transistor (50V, 3A)

2SD1963

Features

External dimensions (Unit : mm)

1) Low saturation voltage, typically

MPT3

(1)Base

(2)Collector

(3)Emitter

1.5

0.4

1.6

0.5

3.0

0.4

0.4

1.5

1.5

(3)

(2)

(1)

4.5

2) Excellent DC current gain characteristics.

3) Complements the 2SB1308.

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Parameter

Tj

Tstg

50

V

V

V

A(DC)

°C

°C

20

6

3

A(Pulse)

5

0.5

2.0

W

W

150

−55 to 150

Symbol

Limits

Unit

Electrical characteristics (Ta=25

°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Parameter

Symbol

Cob

Min.

50

20

6

−

−

180

−

∗

∗

−

−

−

−

−

−

−

−

150

0.25

35

−

−

−

0.5

0.5

560

0.45

−

−

=50

µA

= 1mA

= 50

µA

=40V

=5V

=1.5A/ 0.15A

V

V

µA

µA

−

V

MHz

pF

Typ.

Max.

Unit

Conditions

Transition frequency