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2SC4391 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC4391 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 s Features q Low collector to emitter saturation voltage VCE(sat). q High collector to emitter voltage VCEO. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5 ±0.1 2.5 ±0.5 2.5±0.5 6.9 ±0.1 1.05 ±0.05 (1.45) 4.0 0.7 0.8 0.65 max. 0.45 +0.1 –0.05 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 80 80 5 1.5 1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 40V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA *2 IC = 500mA, IB = 50mA *2 IC = 500mA, IB = 50mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 80 80 5 120 60 typ 0.15 0.85 120 10 max 0.1 340 0.3 1.2 20 Unit µA V V V V V MHz pF *1h FE1 Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2 ±0.1 0.65 max. 0.45 0.1 0.05 + – Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) |
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