EMF8

Transistors

Rev.A

2/4

Absolute maximum ratings (Ta=25

°C)

Tr1

Parameter

∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

Tj

Tstg

Limits

15

12

6

500

150(TOTAL)

150

−55 to +150

1.0

∗1

∗2

Unit

V

V

V

mA

A

mW

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

DTr2

Parameter

∗1 Characteristics of built-in transistor.

∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

Tj

Tstg

Limits

50

−10 to +40

100

30

150(TOTAL)

150

−55 to +150

∗1

∗2

Unit

V

V

mA

mA

mW

°C

°C

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Electrical characteristics (Ta=25

°C)

Tr1

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

−

320

−

MHz

12

−−

V

=1mA

Collector-emitter breakdown voltage

15

−−

V

=10µA

Collector-base breakdown voltage

6

−−

V

=10µA

Emitter-base breakdown voltage

−−

100

nA

=15V

Collector cut-off current

−−

100

nA

=6V

Emitter cut-off current

−

100

250

mV

Collector-emitter saturation voltage

270

−

680

−

DC current gain

Cob

−

7.5

−

pF

Collector output capacitance

DTr2

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

Transition frequency

−

250

−

MHz

∗Characteristics of built-in transistor.

−−

0.5

V

Input voltage

3.0

−−

V

−

100

300

mV

Output voltage

−−

180

Input current

−−

500

nA

Output current

32.9

47

61.1

k

Ω

−

Input resistance

68

−−

−

DC current gain

−

0.8

1.0

1.2

−

Resistance ratio