LM30P20Q datasheet(2/6 Pages) LEIDITECH

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Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.5

2.2

VGS=10V, ID=10A

7.6

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=10A

11.5

mΩ

Forward Transconductance

gFS

VDS=5V,ID=10A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

1210

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

105

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=15V, RL=0.75Ω

VGS=10V,RG=3Ω

Total Gate Charge

17.5

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=15V,ID=10A,

VGS=10V

4.1

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=10A

1.2

Diode Forward Current

(Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =10A

di/dt = 100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

EAS condition:Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω

Rev :

www.leiditech.com

01.06.2018

2/6

LM3020Q

LM30P20Q Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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