TYNA616 datasheet(1/3 Pages) FS

Part #	TYNA616

Description	Silicon Planar PNPN Thyristor (16A SCR)

PDF	3 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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MAIN FEATURES

Symbol

value

unit

IT(RMS)

16

A

VDRM/VRRM

600

V

ITSM

A

GENERAL DESCRIPTION

 Glass passivated triacs in a plastic envelope ,

intended for use in applications requiring

high bidirectional transient andblocking

voltage capability and high thermal cycling performance.

 Typical applications include motor control,

industrial and domestic lighting , heating and static switching.

ABSOLUTE MAXIMUM RATINGS (Ta=25

unless otherwise noted)

e

u

l

a

v

r

e

t

e

m

a

r

a

p

l

o

b

m

y

s

unit

IT(RMS)

RMS on-state current (full sine wave)

D

2 PAK/TO-220

TC=107

℃

16

ITSM

Non repetitive surge peak on-state current (full sine wave, Tj =25

℃)

A

IGM

Peak gate current

2

A

PG(AV)

Average gate power dissipation

Tj=125

℃

0.5

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

-40 to +150

-40 to +125

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Rated repetitive peak off-state/reverse voltage

VDRM,VRRM

ID=10

μA

600

V

Rated repetitive peak off-state current

IDRM, IRRM

VD=6

V

0

2

10

μA

On-state voltage

VTM

IT=12A

1.7

V

20

mA

Gate trigger current

IGT

VD=12V

RL=100

Ω

1.45

V

Gate trigger voltage

VGT

VD=12V

RL=100

Ω

Holding current

IH

IT =100mA I = 20mA

G

30

mA

℃

130

TO-220A

2. ANODE

3. GATE

1. KATHODE

1

2

3

insulated

Silicon Planar PNPN Thyristor (16A SCR)

130

A

SEMICONDUCTOR

TECHNICAL DATA

TYNA616

2019. 11. 18

1/3

Revision No : 0

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