1

Transistor

2SC4562

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA1748

q

q

q

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Emitter

EIAJ:SC–70

3:Collector

S–Mini Type Package

2.1

±0.1

1.25

±0.1

0.425

0.425

1

3

2

0.2

±0.1

Symbol

Ratings

50

50

5

50

150

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

*

Conditions

min

50

50

5

200

typ

0.06

250

1.5

max

0.1

100

500

0.3

Unit

µA

µA

V

V

V

V

MHz

pF

Marking symbol :

AM

Rank

Q

R

200 ~ 400

250 ~ 500

Marking Symbol

AMQ

AMR