FTK4407S datasheet(2/5 Pages) FS

2 / 5 page

2020.04. 10

2/5

FTK4407S

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR) DSS

VGS = 0V, ID =-250µA

-30

Gate-body leakage current

IGSS

VDS =0V, VGS =±20V

±100

On characteristics

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-1.0

-1.5

-2.2

VGS =-10V, ID =-10A

9.0

mΩ

Static drain-source on-sate resistance

VGS =-6V, ID =-8A

10.6

mΩ

Forward transconductance

VDS =-5V, ID =-10A

④ ⑤

Dynamic characteristics

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,

f =1MHz

Switching characteristics

Total gate charge

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDS=-

15V,VGS=-10V,

ID=-

10A

Turn-on delay time

td(on)

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

VDS=-15V,

VGS=-10V,

RL=

1.25Ω, RG=3Ω

Drain-Source Diode Characteristics

Drain-source diode forward voltage

VSD

VGS =0V, IS=-

Continuous drain-source diode forward

current

-11

Pulsed drain-source diode forward current

Notes:

④

①

②

④ ⑤

④

305

Zero gate voltage drain current

IDSS

VDS =-24V

VGS =0V

-1

µA

TJ =25

℃

-200

TJ =125

℃

2885

341

5770

682

610

1.TC=25

℃ Limited only by maximum temperature allowed.

2.PW≤10μs, Duty cycle≤1%.

3.EAS condition: VDD=-20V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°

℃.

4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

5.Guaranteed by design, not subject to production.

6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25

℃,t≤10sec.

RDS(on)

-42

-12

FTK4407S Datasheet(PDF) 2 Page - First Silicon Co., Ltd

FTK4407S Datasheet(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5

Datasheet Download

Link URL