FTK4959D datasheet(1/5 Pages) FS

Part #	FTK4959D

Description	40V P-Channel MOSFETs

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃)

-90

A

Drain Current – Continuous (TC=100℃)

-57

A

IDM

Drain Current – Pulsed1

-360

A

EAS

Single Pulse Avalanche Energy2

174

mJ

IAS

Single Pulse Avalanche Current2

-59

A

PD

Power Dissipation (TC=25℃)

101

W

Power Dissipation – Derate above 25℃

0.81

W/℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to Ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to Case

---

1.23

℃/W

BVDSS

RDSON

ID

-40V

5.8m

Ω

-90A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -40V,-90A, RDS(ON) =5.8m

Ω@VGS = -10V

 Fast switching

 Green Device Available

 Suit for -4.5V Gate Drive Applications

General Description

Features

Applications

 Notebook

 Load Switch

 Battery Protection

 Hand-held Instruments

Thermal Characteristics

TO-252 Pin Configuration

S

D

G

40V P-Channel MOSFETs

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)

2020. 06. 25

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4959D

1. Gate

2. Drain

3. Source

1

3

2

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