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2SC4715 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SC4715
Description  Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
PDF  2 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC4715 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
s Features
q
Satisfactory linearity of forward current transfer ratio hFE.
q
High collector to emitter voltage VCEO.
q
Small collector output capacitance Cob.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC–72
3:Base
New S Type Package
4.0
±0.2
marking
2.54
±0.15
1.27
1.27
123
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
150
5
100
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Noise voltage
Symbol
ICBO
VCEO
VEBO
hFE
*1
VCE(sat)
Cob
fT
NV
Conditions
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = 0, f = 1MHz
VCB = 10V, IE = –10mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
150
5
130
typ
160
150
max
1
330
1
3
Unit
µA
V
V
V
pF
MHz
mV
*1h
FE Rank classification
Rank
R
S
hFE
130 ~ 220
185 ~ 330


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