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FTK6809 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6809
Description  60V Dual P-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6809 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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60V Dual P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
BVDSS TJ BVDSS Temperature Coefficient
Reference to 25 , ID=-1mA
---
-0.05
---
V/
IDSS
Drain-Source Leakage Current
VDS=-60V , VGS=0V , TJ=25
---
---
1
uA
VDS=-48V , VGS=0V , TJ=125
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS 20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=-10V , ID=-2A
---
87
105
mΩ
VGS=-4.5V , ID=-1A
---
120
145
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.5
-2.5
V
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/
gfs
Forward Transconductance
VDS=-10V , ID=-1A
---
3
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=-30V , VGS=-10V , ID=-2A
---
10.4
15
nC
Qgs
Gate-Source Charge2 , 3
---
1.1
1.6
Qgd
Gate-Drain Charge2 , 3
---
2.7
4
Td(on)
Turn-On Delay Time2 , 3
VDD=-30V , VGS=-10V , RG=6Ω
ID=-1A
---
8
16
ns
Tr
Rise Time2 , 3
---
15.4
30
Td(off)
Turn-Off Delay Time2 , 3
---
42.8
80
Tf
Fall Time2 , 3
---
8.4
16
Ciss
Input Capacitance
VDS=-30V , VGS=0V , F=1MHz
---
785
1300
pF
Coss
Output Capacitance
---
175
300
Crss
Reverse Transfer Capacitance
---
112
220
Rg
V
e
c
n
a
t
s
i
s
e
r
e
t
a
G
GS
=0V, VDS=0V, F=1MHz
---
27
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-4
A
ISM
Pulsed Source Current3
---
---
-8
A
VSD
Diode Forward Voltage3
VGS=0V , IS=-1A , TJ=25
---
---
-1
V
trr
Reverse Recovery Time
VGS=0V,IS=-3A , di/dt=100A/µs
TJ=25
---
52
---
ns
Qrr
Reverse Recovery Charge
---
30
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width
300us , duty cycle
2%.
3.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2020. 01. 06
2/5
Revision No : 0
FTK6809



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