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FTK6901DD Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK6901DD
Description  60V P-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6901DD Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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60V P-Channel MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-60
---
---
V
△
BVDSS △TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.036
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=
-60V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-48V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS 20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-20A
---
7.6
9.2
mΩ
VGS=
-4.5V , ID=-10A
---
9.3
12
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-1.2
-1.6
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-6.3
---
mV/℃
gfs
Forward Transconductance
VDS=
-10V , ID=-3A
---
18
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=
-30V , VGS=-10V , ID=-5A
---
138
210
nC
Qgs
Gate-Source Charge3,4
---
25.4
38
Qgd
Gate-Drain Charge3,4
---
12.8
19
Td(on)
Turn-On Delay Time3,4
VDD=
-48V , VGS=-10V , RG=6Ω
ID
=
-1A
---
70
140
ns
Tr
Rise Time3,4
---
205
410
Td(off)
Turn-Off Delay Time3,4
---
402
804
Tf
Fall Time3,4
---
197
394
Ciss
Input Capacitance
VDS=
-25V , VGS=0V , F=1MHz
---
8620
12930
pF
Coss
Output Capacitance
---
486
730
Crss
Reverse Transfer Capacitance
---
288
430
.
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S
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-75
A
ISM
Pulsed Source Current
---
---
-150
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
VGS=10V,IS=10A , di/dt=100A/µs
TJ=25℃
---
370
---
ns
Qrr
Reverse Recovery Charge
---
1740
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=80A.,RG=25Ω Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Off Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
2019. 10. 14
2/5
Revision No : 0
FTK6901DD



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